IRFU4105Z Datasheet. Specs and Replacement

Type Designator: IRFU4105Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0245 Ohm

Package: IPAK

IRFU4105Z substitution

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IRFU4105Z datasheet

 ..1. Size:330K  international rectifier
 irfr4105zpbf irfu4105zpbf.pdf pdf_icon

IRFU4105Z

PD - 95374B IRFR4105ZPbF IRFU4105ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 24.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 30A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re... See More ⇒

 ..2. Size:261K  inchange semiconductor
 irfu4105z.pdf pdf_icon

IRFU4105Z

isc N-Channel MOSFET Transistor IRFU4105Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 0.1. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf pdf_icon

IRFU4105Z

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed... See More ⇒

 6.1. Size:239K  international rectifier
 irfr4105pbf irfu4105pbf.pdf pdf_icon

IRFU4105Z

PD - 95550A IRFR4105PbF IRFU4105PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.045 G Description Fifth Generation HEXFETs from International Rectifier ID = 27A S utilize advanced processing techniques to achieve the lowest possible on-r... See More ⇒

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Detailed specifications: IRFU3707Z, IRFU3708, IRFU3709, IRFU3709Z, IRFU3710Z, IRFU3711Z, IRFU3806, IRFU4104, IRF1407, IRFU4615, IRFU4620, IRFU48Z, IRFU9N20D, IRFZ44V, IRFZ44VL, IRFZ44VS, IRFZ44VZ

Keywords - IRFU4105Z MOSFET specs

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