IRFU4615 Datasheet: MOSFET, N-Ch, 150V, 33A. Full specification with pinout and replacement list

IRFU4615 Datasheet. Specs and Replacement

Type Designator: IRFU4615 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: IPAK

IRFU4615 substitution

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IRFU4615 datasheet

..1. Size:299K international rectifier
irfr4615pbf irfu4615pbf.pdf pdf_icon

IRFR4615PbF IRFU4615PbF HEXFET Power MOSFET D VDSS 150V Applications l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 34m l Uninterruptible Power Supply G max. 42m l High Speed Power Switching l Hard Switched and High Frequency Circuits ID 33A S D D Benefits l Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness G G l Fully Characterized Capac... See More ⇒

..2. Size:260K inchange semiconductor
irfu4615.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFU4615 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

0.1. Size:289K international rectifier
auirfr4615 auirfu4615.pdf pdf_icon

PD -96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET l Advanced Process Technology D l Low On-Resistance VDSS 150V l 175 C Operating Temperature l Fast Switching RDS(on) typ. 34m l Repetitive Avalanche Allowed up to Tjmax G max. 42m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 33A S Description D D Specifically designed for Automo... See More ⇒

0.2. Size:1979K cn vbsemi
irfu4615p.pdf pdf_icon

IRFU4615P www.VBsemi.tw N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 25 PWM Optimized 200 0.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab... See More ⇒