Справочник MOSFET. IRFU4615

 

IRFU4615 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFU4615
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 144 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
   Тип корпуса: IPAK

 Аналог (замена) для IRFU4615

 

 

IRFU4615 Datasheet (PDF)

 ..1. Size:299K  international rectifier
irfr4615pbf irfu4615pbf.pdf

IRFU4615
IRFU4615

IRFR4615PbFIRFU4615PbFHEXFET Power MOSFETDVDSS150VApplicationsl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.34ml Uninterruptible Power SupplyG max. 42ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsID 33ASDDBenefitsl Improved Gate, Avalanche and Dynamic dV/dt SSDRuggednessGGl Fully Characterized Capac

 ..2. Size:299K  infineon
irfr4615pbf irfu4615pbf.pdf

IRFU4615
IRFU4615

IRFR4615PbFIRFU4615PbFHEXFET Power MOSFETDVDSS150VApplicationsl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.34ml Uninterruptible Power SupplyG max. 42ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsID 33ASDDBenefitsl Improved Gate, Avalanche and Dynamic dV/dt SSDRuggednessGGl Fully Characterized Capac

 ..3. Size:260K  inchange semiconductor
irfu4615.pdf

IRFU4615
IRFU4615

isc N-Channel MOSFET Transistor IRFU4615FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 0.1. Size:289K  infineon
auirfr4615 auirfu4615.pdf

IRFU4615
IRFU4615

PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo

 0.2. Size:1979K  cn vbsemi
irfu4615p.pdf

IRFU4615
IRFU4615

IRFU4615Pwww.VBsemi.twN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 25 PWM Optimized2000.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-Tab

 8.1. Size:384K  international rectifier
irfr4620pbf irfu4620pbf.pdf

IRFU4615
IRFU4615

PD -96207AIRFR4620PbFIRFU4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 64ml High Speed Power SwitchingG max. 78ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capacit

 8.2. Size:384K  infineon
irfr4620pbf irfu4620pbf.pdf

IRFU4615
IRFU4615

PD -96207AIRFR4620PbFIRFU4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 64ml High Speed Power SwitchingG max. 78ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capacit

 8.3. Size:261K  inchange semiconductor
irfu4620.pdf

IRFU4615
IRFU4615

isc N-Channel MOSFET Transistor IRFU4620FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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