All MOSFET. IRFZ44V Datasheet

 

IRFZ44V MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ44V

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 115 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 55 A

Total Gate Charge (Qg): 44.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0165 Ohm

Package: TO220AB

IRFZ44V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ44V Datasheet (PDF)

1.1. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _update

IRFZ44V
IRFZ44V

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 60V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12mΩ G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE

1.2. irfz44vpbf.pdf Size:226K _update

IRFZ44V
IRFZ44V

PD - 94826A IRFZ44VPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced pro

 1.3. irfz44vs.pdf Size:145K _international_rectifier

IRFZ44V
IRFZ44V

PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175C Operating Temperature Fast Switching RDS(on) = 16.5m? Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques

1.4. irfz44v.pdf Size:229K _international_rectifier

IRFZ44V
IRFZ44V

PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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