IRFZ44VZS
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ44VZS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 92
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 57
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 43
nC
trⓘ - Rise Time: 62
nS
Cossⓘ -
Output Capacitance: 270
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
D2PAK
IRFZ44VZS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ44VZS
Datasheet (PDF)
..1. Size:301K international rectifier
irfz44vzl irfz44vzpbf irfz44vzspbf.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
..2. Size:372K infineon
irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf
PD - 95947AIRFZ44VZPbFIRFZ44VZSPbFIRFZ44VZLPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 60V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12m Lead-FreeGDescriptionID = 57AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremel
..3. Size:301K infineon
irfz44vz irfz44vzs irfz44vzl.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
..4. Size:257K inchange semiconductor
irfz44vzs.pdf
Isc N-Channel MOSFET Transistor IRFZ44VZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
0.1. Size:274K international rectifier
auirfz44vzstrl.pdf
PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo
0.2. Size:654K infineon
auirfz44vzs.pdf
AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed
6.1. Size:245K inchange semiconductor
irfz44vz.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44VZIIRFZ44VZFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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