IRL1404Z MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRL1404Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO220AB

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IRL1404Z Datasheet (PDF)

..1. Size:281K international rectifier
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PD - 95446BIRL1404ZPbFIRL1404ZSPbFIRL1404ZLPbFFeaturesl Logic LevelHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 40Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.1ml Lead-FreeGID = 120ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

..2. Size:285K infineon
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..3. Size:252K inchange semiconductor
irl1404z.pdf pdf_icon

isc N-Channel MOSFET Transistor IRL1404ZFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

0.1. Size:375K international rectifier
auirl1404zstrl.pdf pdf_icon

PD - 96331AUTOMOTIVE GRADEAUIRL1404ZAUIRL1404ZSAUIRL1404ZLFeaturesHEXFET Power MOSFETl Logic Levell Advanced Process TechnologyV(BR)DSS 40VDl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ.2.5ml Fast Switching max. 3.1ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

0.2. Size:754K infineon
auirl1404z auirl1404zs auirl1404zl.pdf pdf_icon

AUIRL1404Z AUIRL1404ZS AUTOMOTIVE GRADE AUIRL1404ZL HEXFET Power MOSFET Features VDSS 40V Logic Level Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.1m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching ID (Package Limited) 160A Repetitive Avalanche Allowed up to Tjmax

7.1. Size:646K international rectifier
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PD - 95148IRL1404SPbFIRL1404LPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 40V Fast Switching Fully Avalanche RatedRDS(on) = 0.004 Lead-Free GDescriptionID = 160A Seventh Generation HEXFET power MOSFETs fromSInternational Rectifier utilize advanced processingtechniqu

7.2. Size:133K international rectifier
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PD - 93854AIRL1404SIRL1404L Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 40V 175C Operating Temperature Fast SwitchingRDS(on) = 0.004 Fully Avalanche RatedGDescriptionSeventh Generation HEXFET power MOSFETs fromID = 160A International Rectifier utilize advanced processingStechniques to achieve e

7.3. Size:250K international rectifier
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PD - 96385AAUTOMOTIVE GRADEAUIRL1404SAUIRL1404LFeaturesHEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate DriveD Low On-Resistance V(BR)DSS40V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.4m Fast SwitchingG Fully Avalanche RatedID 160A Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant Automotive Qualif

7.4. Size:102K international rectifier
irl1404.pdf pdf_icon

PD -93854IRL1404HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 160A SDescriptionSeventh Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low

7.5. Size:213K international rectifier
irl1404pbf.pdf pdf_icon

PD - 95588AIRL1404PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 4.0mGl Fast Switchingl Fully Avalanche RatedID = 160Al Lead-Free SDescriptionSeventh Generation HEXFET power MOSFETs from InternationalRectifier utilize advanced processing techniques to

7.6. Size:648K infineon
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7.7. Size:213K infineon
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7.8. Size:257K inchange semiconductor
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Isc N-Channel MOSFET Transistor IRL1404SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

7.9. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor IRL1404IIRL1404FEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extre

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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IRL1404Z MOSFET. Datasheet pdf. Equivalent

IRL1404Z Datasheet (PDF)

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