All MOSFET. IRL8113L Datasheet

 

IRL8113L MOSFET. Datasheet pdf. Equivalent

Type Designator: IRL8113L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.25 V

Maximum Drain Current |Id|: 105 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 23 nC

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO262

IRL8113L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRL8113L Datasheet (PDF)

1.1. irl8113lpbf irl8113spbf irl8113pbf.pdf Size:279K _international_rectifier

IRL8113L
IRL8113L

PD - 95582 IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET® Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg (Typ.) l Lead-Free 30V 6.0m 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum

4.1. irl8114pbf.pdf Size:423K _international_rectifier

IRL8113L
IRL8113L

IRL8114PbF HEXFET® Power MOSFET Application  Optimized for UPS/Inverter Applications VDSS 30V D  Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5m G Benefits ID (Silicon Limited) 120A  Low RDS(on) at 4.5V VGS S  Low Gate Charge ID (Package Limited) 90A  Fully Characterized Capacitance and Avalanche SOA  Lead-Free

 

Datasheet: IRL3715ZS , IRL3803V , IRL3803VS , IRL6342 , IRL7833 , IRL7833L , IRL7833S , IRL8113 , BS170 , IRL8113S , IRLB3034 , IRLB3036 , IRLB3036G , IRLB3813 , IRLB4030 , IRLB8721 , IRLB8743 .

 
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