All MOSFET. IRLB3036G Datasheet

 

IRLB3036G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLB3036G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 270 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 91 nC
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO220AB

 IRLB3036G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLB3036G Datasheet (PDF)

 ..1. Size:294K  international rectifier
 irlb3036gpbf.pdf

IRLB3036G IRLB3036G

PD - 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 6.1. Size:284K  international rectifier
 irlb3036pbf.pdf

IRLB3036G IRLB3036G

PD - 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 6.2. Size:250K  international rectifier
 auirlb3036.pdf

IRLB3036G IRLB3036G

AUTOMOTIVE GRADEAUIRLB3036HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS 60Vl Ultra Low On-ResistanceRDS(on) typ.1.9ml Logic Level Gate Drivemax. 2.4ml Dynamic dv/dt RatingGID (Silicon Limited)l 175C Operating Temperature 270Al Fast SwitchingID (Package Limited)S 195Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compli

 6.3. Size:251K  inchange semiconductor
 irlb3036.pdf

IRLB3036G IRLB3036G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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