IRLB3036G PDF and Equivalents Search

 

IRLB3036G PDF Specs and Replacement


   Type Designator: IRLB3036G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 270 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO220AB
 

 IRLB3036G substitution

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IRLB3036G PDF Specs

 ..1. Size:294K  international rectifier
irlb3036gpbf.pdf pdf_icon

IRLB3036G

PD - 96275 IRLB3036GPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive ... See More ⇒

 6.1. Size:284K  international rectifier
irlb3036pbf.pdf pdf_icon

IRLB3036G

PD - 97357 IRLB3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive ... See More ⇒

 6.2. Size:250K  international rectifier
auirlb3036.pdf pdf_icon

IRLB3036G

AUTOMOTIVE GRADE AUIRLB3036 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS 60V l Ultra Low On-Resistance RDS(on) typ. 1.9m l Logic Level Gate Drive max. 2.4m l Dynamic dv/dt Rating G ID (Silicon Limited) l 175 C Operating Temperature 270A l Fast Switching ID (Package Limited) S 195A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compli... See More ⇒

 6.3. Size:251K  inchange semiconductor
irlb3036.pdf pdf_icon

IRLB3036G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLB3036 IIRLB3036 FEATURES Static drain-source on-resistance RDS(on) 2.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒

Detailed specifications: IRL7833 , IRL7833L , IRL7833S , IRL8113 , IRL8113L , IRL8113S , IRLB3034 , IRLB3036 , IRFZ44 , IRLB3813 , IRLB4030 , IRLB8721 , IRLB8743 , IRLB8748 , IRLH5030 , IRLH5034 , IRLH5036 .

History: IRLB3034PBF

Keywords - IRLB3036G MOSFET specs

 IRLB3036G cross reference
 IRLB3036G equivalent finder
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