IRLB4030 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLB4030
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 370 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 87 nC
trⓘ - Rise Time: 330 nS
Cossⓘ - Output Capacitance: 670 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TO220AB
IRLB4030 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLB4030 Datasheet (PDF)
irlb4030pbf.pdf
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PD - 97369IRLB4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.5V VGSl Superio
irlb4030pbf.pdf
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PD - 97369IRLB4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.5V VGSl Superio
irlb4030.pdf
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isc N-Channel MOSFET Transistor IRLB4030IIRLB4030FEATURESStatic drain-source on-resistance:RDS(on) 4.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
irlb4132.pdf
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Approved(Not Released)PD - TBDIRLB4132PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl Low Voltage Power Tools30V 3.5m 36nCBenefitsDl Best in Class Performance for UPS/InverterApplicationsl Very Low RDS(on) at 4.5V VGSSDl Ultra-Low Gate ImpedanceGl Fully Characterized Avalanche VoltageTO-220ABand Curr
irlb4132pbf.pdf
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Approved(Not Released)PD - TBDIRLB4132PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl Low Voltage Power Tools30V 3.5m 36nCBenefitsDl Best in Class Performance for UPS/InverterApplicationsl Very Low RDS(on) at 4.5V VGSSDl Ultra-Low Gate ImpedanceGl Fully Characterized Avalanche VoltageTO-220ABand Curr
irlb4132.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB4132FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLow voltage power toolsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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