IRLHM620 Datasheet and Replacement
Type Designator: IRLHM620
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: PQFN3.3X3.3
IRLHM620 substitution
IRLHM620 Datasheet (PDF)
irlhm620pbf.pdf

PD - 97565AIRLHM620PbFHEXFET Power MOSFETVDS20 VVGS max12 VD 5 4 GRDS(on) max 2.5 m D 6 3 S(@VGS = 4.5V)D 7 2 SRDS(on) max D 8 1 S3.5 m(@VGS = 2.5V)3.3mm x 3.3mm PQFNQg (typical) 52 nCID 40 A(@Tc(Bottom) = 25C)Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFETFeatures and Benefi
irlhm630trpbf.pdf

IRLHM630PbF HEXFET Power MOSFET VDSS 30 V VGS 12 V RDS(on) max 3.5 (@ VGS = 4.5V) m(@ VGS = 2.5V) 4.5 Qg (typical) 41 nC ID 40 APQFN 3.3 x 3.3 mm (@TC (Bottom) = 25C) Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET Features Benefits Low RDSon (
irlhm630pbf.pdf

IRLHM630PbF HEXFET Power MOSFET VDSS 30 V VGS 12 V RDS(on) max 3.5 (@ VGS = 4.5V) m(@ VGS = 2.5V) 4.5 Qg (typical) 41 nC ID 40 APQFN 3.3 x 3.3 mm (@TC (Bottom) = 25C) Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET Features Benefits Low RDSon (
Datasheet: IRLB3813 , IRLB4030 , IRLB8721 , IRLB8743 , IRLB8748 , IRLH5030 , IRLH5034 , IRLH5036 , P55NF06 , IRLHM630 , IRLHS6242 , IRLHS6342 , IRLL024Z , IRLML0030 , IRLML0040 , IRLML0060 , IRLML0100 .
Keywords - IRLHM620 MOSFET datasheet
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