IRLHM620 MOSFET Datasheet: N-Ch, 20V, 26A. Full specification with pinout and replacement list

IRLHM620 Specs and Replacement

Type Designator: IRLHM620

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: PQFN3.3X3.3

IRLHM620 substitution

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IRLHM620 datasheet

..1. Size:216K international rectifier
irlhm620pbf.pdf pdf_icon

PD - 97565A IRLHM620PbF HEXFET Power MOSFET VDS 20 V VGS max 12 V D 5 4 G RDS(on) max 2.5 m D 6 3 S (@VGS = 4.5V) D 7 2 S RDS(on) max D 8 1 S 3.5 m (@VGS = 2.5V) 3.3mm x 3.3mm PQFN Qg (typical) 52 nC ID 40 A (@Tc(Bottom) = 25 C) Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET Features and Benefi... See More ⇒

8.1. Size:533K 1
irlhm630trpbf.pdf pdf_icon

IRLHM630PbF HEXFET Power MOSFET VDSS 30 V VGS 12 V RDS(on) max 3.5 (@ VGS = 4.5V) m (@ VGS = 2.5V) 4.5 Qg (typical) 41 nC ID 40 A PQFN 3.3 x 3.3 mm (@TC (Bottom) = 25 C) Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET Features Benefits Low RDSon (... See More ⇒

8.2. Size:533K international rectifier
irlhm630pbf.pdf pdf_icon