IRLP3034 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLP3034
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 341 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 327 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 108 nC
trⓘ - Rise Time: 827 nS
Cossⓘ - Output Capacitance: 1980 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: TO247AC
IRLP3034 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLP3034 Datasheet (PDF)
irlp3034pbf.pdf
PD - 96230IRLP3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 327Al Hard Switched and High Frequency CircuitsSID (Package Limited) 195ABenefitsl Optimized for Logic Level Drive D
irlp3034.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLP3034IIRLP3034FEATURESStatic drain-source on-resistance:RDS(on)1.7mEnhancement mode:Vth =1.0 to 2.5V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterru
irlp3803.pdf
PD - _____IRLP3803PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 30VUltra Low On-ResistanceDynamic dv/dt RatingRDS(on) = 0.006175C Operating TemperatureFast SwitchingFully Avalanche RatedID = 120ADescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowe
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