All MOSFET. IRLR2905Z Datasheet

 

IRLR2905Z Datasheet and Replacement


   Type Designator: IRLR2905Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: DPAK
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IRLR2905Z Datasheet (PDF)

 ..1. Size:328K  international rectifier
irlu2905zpbf irlr2905zpbf.pdf pdf_icon

IRLR2905Z

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 ..2. Size:340K  international rectifier
irlr2905zpbf irlu2905zpbf.pdf pdf_icon

IRLR2905Z

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 ..3. Size:242K  inchange semiconductor
irlr2905z.pdf pdf_icon

IRLR2905Z

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905ZFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV G

 0.1. Size:273K  international rectifier
auirlr2905ztr.pdf pdf_icon

IRLR2905Z

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KQB2N30 | H15N10U | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - IRLR2905Z MOSFET datasheet

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