IRLS4030-7P
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLS4030-7P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 370
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 190
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 93
nC
trⓘ - Rise Time: 160
nS
Cossⓘ -
Output Capacitance: 680
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039
Ohm
Package:
D2PAK
IRLS4030-7P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLS4030-7P
Datasheet (PDF)
..1. Size:287K international rectifier
irls4030-7ppbf.pdf 
PD -97371IRLS4030-7PPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.2ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 3.9ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Optimized for Logic Level DriveDl Very Low RDS(ON) at 4.5V VGSl
..2. Size:287K infineon
irls4030-7ppbf.pdf
PD -97371IRLS4030-7PPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.2ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 3.9ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Optimized for Logic Level DriveDl Very Low RDS(ON) at 4.5V VGSl
0.1. Size:686K infineon
auirls4030-7p.pdf
AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features Optimized for Logic Level Drive VDSS 100V Advanced Process Technology RDS(on) typ. 3.2m Ultra Low On-Resistance Logic Level Gate Drive max. 3.9m 175C Operating Temperature ID 190A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl
6.1. Size:382K international rectifier
irls4030pbf irlsl4030pbf.pdf
PD - 97370IRLS4030PbFIRLSL4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.l High Speed Power Switching3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.
6.2. Size:382K infineon
irls4030pbf irlsl4030pbf.pdf
PD - 97370IRLS4030PbFIRLSL4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.l High Speed Power Switching3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.
6.3. Size:501K infineon
auirls4030 auirlsl4030.pdf
AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D VDSS 100V Ultra Low On-Resistance RDS(on) typ. 3.4m Logic Level Gate Drive G175C Operating Temperature max 4.3mFast Switching S Repetitive Avalanche Allowed up to Tjmax ID
6.4. Size:258K inchange semiconductor
irls4030.pdf
Isc N-Channel MOSFET Transistor IRLS4030FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
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