All MOSFET. AUIRF1010EZL Datasheet

 

AUIRF1010EZL Datasheet and Replacement


   Type Designator: AUIRF1010EZL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 84 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 58 nC
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO262
 
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AUIRF1010EZL Datasheet (PDF)

 ..1. Size:756K  infineon
 auirf1010ez auirf1010ezs auirf1010ezl.pdf pdf_icon

AUIRF1010EZL

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

 3.1. Size:375K  international rectifier
 auirf1010ezstrl.pdf pdf_icon

AUIRF1010EZL

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)

 5.1. Size:268K  international rectifier
 auirf1010zstrl.pdf pdf_icon

AUIRF1010EZL

PD - 97458AAUIRF1010ZAUTOMOTIVE GRADEAUIRF1010ZSAUIRF1010ZLFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.7.5mTjmaxG Lead-Free, RoHS CompliantID (Silicon Limited)94A Automotive Qualified *S

 5.2. Size:752K  infineon
 auirf1010z auirf1010zs auirf1010zl.pdf pdf_icon

AUIRF1010EZL

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

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