AUIRF1324S-7P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRF1324S-7P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 429
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 180
nC
trⓘ - Rise Time: 240
nS
Cossⓘ -
Output Capacitance: 3380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001
Ohm
Package:
D2PAK
AUIRF1324S-7P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRF1324S-7P
Datasheet (PDF)
..1. Size:655K infineon
auirf1324s-7p.pdf
AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description
4.1. Size:472K international rectifier
auirf1324strl.pdf
PD - 97483AUIRF1324SAUTOMOTIVE GRADEAUIRF1324LHEXFET Power MOSFETFeatures Advanced Process Technology DVDSS24V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.1.3m 175C Operating TemperatureGID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)195A Lead-Free, RoHS Compliant S Automotive Qua
4.2. Size:461K infineon
auirf1324s auirf1324l.pdf
AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features VDSS 24V Advanced Process Technology RDS(on) typ. 1.3m Ultra Low On-Resistance max. 1.65m Dynamic dV/dT Rating 175C Operating Temperature ID (Silicon Limited) 340A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-
5.1. Size:240K infineon
auirf1324wl.pdf
PD - 97676AAUTOMOTIVE GRADEAUIRF1324WLHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDV(BR)DSS24Vl Ultra Low On-ResistanceRDS(on) typ.1.16ml 50% Lower Lead Resistance max. 1.30ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)382A l Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240A l Lead-Free,
5.2. Size:432K infineon
auirf1324.pdf
PD - 97482AUTOMOTIVE GRADEAUIRF1324HEXFET Power MOSFETFeaturesDVDSS24V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ.1.2m 175C Operating Temperature max. 1.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID (Silicon Limited) 353A Lead-Free, RoHS CompliantSID (Package Limited)195A Automotive Qualified *DescriptionSpe
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