All MOSFET. AUIRF5210S Datasheet

 

AUIRF5210S MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRF5210S

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 170 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 63 nS

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: D2PAK

AUIRF5210S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRF5210S Datasheet (PDF)

1.1. auirf5210s.pdf Size:236K _international_rectifier

AUIRF5210S
AUIRF5210S

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

Datasheet: AUIRF3805S-7P , AUIRF3808 , AUIRF3808S , AUIRF4104 , AUIRF4104S , AUIRF4905 , AUIRF4905L , AUIRF4905S , 2SK170 , AUIRF540Z , AUIRF540ZS , AUIRF6215 , AUIRF7207Q , AUIRF7416Q , AUIRF7478Q , AUIRF7640S2 , AUIRF7647S2TR .

 


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