AUIRF5210S Specs and Replacement

Type Designator: AUIRF5210S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO263

AUIRF5210S substitution

- MOSFET ⓘ Cross-Reference Search

 

AUIRF5210S datasheet

 ..1. Size:236K  international rectifier
auirf5210s.pdf pdf_icon

AUIRF5210S

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175 C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc... See More ⇒

 ..2. Size:295K  infineon
auirf5210s.pdf pdf_icon

AUIRF5210S

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical... See More ⇒

 8.1. Size:326K  international rectifier
auirf540zstrl.pdf pdf_icon

AUIRF5210S

PD - 96326 AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V(BR)DSS 100V l 175 C Operating Temperature RDS(on) typ. 21m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 26.5m l Lead-Free, RoHS Compliant ID 36A l Automotive Qualified * S Description Specifically designe... See More ⇒

 8.2. Size:702K  infineon
auirf540z auirf540zs.pdf pdf_icon

AUIRF5210S

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175 C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D... See More ⇒

Detailed specifications: AUIRF3805S-7P, AUIRF3808, AUIRF3808S, AUIRF4104, AUIRF4104S, AUIRF4905, AUIRF4905L, AUIRF4905S, TK10A60D, AUIRF540Z, AUIRF540ZS, AUIRF6215, AUIRF7207Q, AUIRF7416Q, AUIRF7478Q, AUIRF7640S2, AUIRF7647S2TR

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.