Справочник MOSFET. AUIRF5210S

 

AUIRF5210S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AUIRF5210S
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 63 ns
   Cossⓘ - Выходная емкость: 800 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

AUIRF5210S Datasheet (PDF)

 ..1. Size:236K  international rectifier
auirf5210s.pdfpdf_icon

AUIRF5210S

AUTOMOTIVE GRADEAUIRF5210SFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-100Vl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.60mGl 175C Operating TemperatureS ID-38Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxDl Lead-Free, RoHS Compliantl Automotive Qualified *Desc

 ..2. Size:295K  infineon
auirf5210s.pdfpdf_icon

AUIRF5210S

AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology VDSS -100V P-Channel MOSFET Ultra Low On-Resistance RDS(on) max. 60m Dynamic dv/dt Rating Fast Switching ID -38A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S G Description Specifical

 8.1. Size:326K  international rectifier
auirf540zstrl.pdfpdf_icon

AUIRF5210S

PD - 96326AUTOMOTIVE GRADEAUIRF540ZAUIRF540ZSFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance V(BR)DSS100Vl 175C Operating TemperatureRDS(on) typ.21ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxGmax. 26.5ml Lead-Free, RoHS CompliantID 36Al Automotive Qualified *SDescriptionSpecifically designe

 8.2. Size:702K  infineon
auirf540z auirf540zs.pdfpdf_icon

AUIRF5210S

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDBL9401L-F085 | SIHG47N60S | SIA465EDJ | HGI110N08AL | STI55NF03L | CHM9935AJGP | 9N95

 

 
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