All MOSFET. AUIRFB4610 Datasheet

 

AUIRFB4610 MOSFET. Datasheet pdf. Equivalent

Type Designator: AUIRFB4610

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 73 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 90 nC

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO220AB

AUIRFB4610 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRFB4610 Datasheet (PDF)

5.1. auirf5210s.pdf Size:236K _international_rectifier

AUIRFB4610
AUIRFB4610

AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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