AUIRFR3806 MOSFET Datasheet: N-Ch, 60V, 43A. Full specification with pinout and replacement list

AUIRFR3806 Specs and Replacement

Type Designator: AUIRFR3806

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0158 Ohm

Package: DPAK

AUIRFR3806 substitution

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AUIRFR3806 datasheet

..1. Size:698K infineon
auirfr3806.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFR3806 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 12.6m Dynamic dV/dT Rating max. 15.8m 175 C Operating Temperature ID 43A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Desc... See More ⇒

7.1. Size:485K international rectifier
auirfr3607 auirfu3607.pdf pdf_icon

AUTOMOTIVE GRADE AUIRFR3607 AUIRFU3607 Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS 75V Fast Switching RDS(on) typ. 7.34m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant max. 9.0m Automotive Qualified * G ID (Silicon Limited) 80A S ID (Package Limited) 56A Description Specifically des... See More ⇒

7.2. Size:228K international rectifier
auirfr3504.pdf pdf_icon

PD - 97687A AUTOMOTIVE GRADE AUIRFR3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated max 9.2m G l Repetitive Avalanche Allowed ID (Silicon Limited) 87A up to Tjmax S ID (Package Limited) l Lead-Free, RoHS Compliant 56A l Automotiv... See More ⇒

7.3. Size:272K international rectifier
auirfr3710ztrl.pdf pdf_icon

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description ... See More ⇒