AUIRFR3806 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AUIRFR3806
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 71 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 43 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 22 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 130 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0158 Ohm
Тип корпуса: DPAK
Аналог (замена) для AUIRFR3806
AUIRFR3806 Datasheet (PDF)
auirfr3806.pdf
AUTOMOTIVE GRADE AUIRFR3806 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 12.6m Dynamic dV/dT Rating max. 15.8m 175C Operating Temperature ID 43A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Desc
auirfr3504.pdf
PD - 97687AAUTOMOTIVE GRADEAUIRFR3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Ratedmax 9.2mGl Repetitive Avalanche AllowedID (Silicon Limited)87Aup to TjmaxSID (Package Limited)l Lead-Free, RoHS Compliant 56Al Automotiv
auirfr3710ztrl.pdf
PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
auirfr3504ztr.pdf
PD - 97492AUIRFR3504ZAUTOMOTIVE GRADEHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 40V Low On-Resistance 175C Operating TemperatureRDS(on) max.9.0m Fast SwitchingGID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited)42AS Automotive Qualified *DescriptionDSpecifical
auirfr3607 auirfu3607.pdf
AUTOMOTIVE GRADEAUIRFR3607AUIRFU3607FeaturesAdvanced Process TechnologyHEXFET Power MOSFETUltra Low On-ResistanceD175C Operating TemperatureVDSS 75VFast SwitchingRDS(on) typ. 7.34mRepetitive Avalanche Allowed up to TjmaxLead-Free, RoHS Compliant max. 9.0mAutomotive Qualified *GID (Silicon Limited) 80AS ID (Package Limited) 56ADescriptionSpecifically des
auirfr3710z.pdf
PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description
auirfr3504z.pdf
AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
