All MOSFET. AUIRFR4105 Datasheet

 

AUIRFR4105 Datasheet and Replacement


   Type Designator: AUIRFR4105
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 34(max) nC
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: DPAK
 

 AUIRFR4105 substitution

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AUIRFR4105 Datasheet (PDF)

 0.1. Size:317K  international rectifier
 auirfr4105ztr.pdf pdf_icon

AUIRFR4105

PD - 97544AUTOMOTIVE GRADE AUIRFR4105ZAUIRFU4105ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyV(BR)DSS55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.24.5mG Fast Switching Repetitive Avalanche Allowed up to Tjmax IDS 30A Lead-Free, RoHS Compliant Automotive Qualified *DescriptionDSpecifically de

 0.2. Size:238K  international rectifier
 auirfr4105tr.pdf pdf_icon

AUIRFR4105

PD - 97597AAUTOMOTIVE GRADEAUIRFR4105HEXFET Power MOSFETFeaturesDV(BR)DSS55V Advanced Planar Technology Low On-ResistanceRDS(on) max.45m Dynamic dV/dT RatingGID (Silicon Limited)27A 175C Operating Temperature Fast SwitchingID (Package Limited)20AS Fully Avalanche Rated Repetitive Avalanche Allowedup toTjmax Lead-Free,

 0.3. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf pdf_icon

AUIRFR4105

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

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Keywords - AUIRFR4105 MOSFET datasheet

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 AUIRFR4105 equivalent finder
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