All MOSFET. AUIRFS3107 Datasheet

 

AUIRFS3107 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AUIRFS3107
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 370 W
   Maximum Drain-Source Voltage |Vds|: 75 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 230 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 160 nC
   Rise Time (tr): 110 nS
   Drain-Source Capacitance (Cd): 840 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
   Package: TO263

 AUIRFS3107 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AUIRFS3107 Datasheet (PDF)

 ..1. Size:716K  infineon
auirfs3107 auirfsl3107.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t

 0.1. Size:694K  infineon
auirfs3107-7p.pdf

AUIRFS3107
AUIRFS3107

AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea

 7.1. Size:716K  infineon
auirfs3206 auirfsl3206.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj

 7.2. Size:704K  infineon
auirfs3207z auirfsl3207z.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3207Z AUTOMOTIVE GRADE AUIRFSL3207Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 4.1m 175C Operating Temperature Fast Switching ID (Silicon Limited) 170A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

 7.3. Size:667K  infineon
auirfs3006.pdf

AUIRFS3107
AUIRFS3107

AUTOMOTIVE GRADE AUIRFS3006 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance max. Dynamic dv/dt Rating 2.5m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

 7.4. Size:453K  infineon
auirfs3004-7p.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3004-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 0.90m Ultra Low On-Resistance 175C Operating Temperature max. 1.25m Fast Switching ID (Silicon Limited) 400A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Q

 7.5. Size:707K  infineon
auirfs3307z auirfsl3307z.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

 7.6. Size:682K  infineon
auirfs3006-7p.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3006-7P AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Dynamic dV/dT Rating max. 2.1m 175C Operating Temperature ID (Silicon Limited) 293A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS

 7.7. Size:681K  infineon
auirfs3306.pdf

AUIRFS3107
AUIRFS3107

AUTOMOTIVE GRADE AUIRFS3306 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 175C Operating Temperature 4.2m Fast Switching ID (Silicon Limited) 160A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant Automotive Q

 7.8. Size:711K  infineon
auirfs3004 auirfsl3004.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3004 AUTOMOTIVE GRADE AUIRFSL3004 HEXFET Power MOSFET Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.4m Ultra Low On-Resistance max. 175C Operating Temperature 1.75m Fast Switching ID (Silicon Limited) 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant

 7.9. Size:709K  infineon
auirfs3607 auirfsl3607.pdf

AUIRFS3107
AUIRFS3107

AUIRFS3607 AUTOMOTIVE GRADE AUIRFSL3607 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 7.34m Low On-Resistance 175C Operating Temperature max. 9.0m Fast Switching ID 80A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifi

 7.10. Size:738K  infineon
auirfs3806.pdf

AUIRFS3107
AUIRFS3107

AUTOMOTIVE GRADE AUIRFS3806 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 12.6m 175C Operating Temperature Fast Switching max. 15.8m Repetitive Avalanche Allowed up to Tjmax ID 43A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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