All MOSFET. AUIRFS3306 Datasheet

 

AUIRFS3306 Datasheet and Replacement


   Type Designator: AUIRFS3306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
 

 AUIRFS3306 substitution

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AUIRFS3306 Datasheet (PDF)

 ..1. Size:681K  infineon
 auirfs3306.pdf pdf_icon

AUIRFS3306

AUTOMOTIVE GRADE AUIRFS3306 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 175C Operating Temperature 4.2m Fast Switching ID (Silicon Limited) 160A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant Automotive Q

 5.1. Size:707K  infineon
 auirfs3307z auirfsl3307z.pdf pdf_icon

AUIRFS3306

AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

 7.1. Size:716K  infineon
 auirfs3206 auirfsl3206.pdf pdf_icon

AUIRFS3306

AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj

 7.2. Size:694K  infineon
 auirfs3107-7p.pdf pdf_icon

AUIRFS3306

AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea

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Keywords - AUIRFS3306 MOSFET datasheet

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