AUIRFSL4227 MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRFSL4227
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 330 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 62 A
Total Gate Charge (Qg): 70 nC
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO262
AUIRFSL4227 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRFSL4227 Datasheet (PDF)
5.1. auirf5210s.pdf 
Size:236K _international_rectifier
AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
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