AUIRFSL4227 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AUIRFSL4227
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 330 W
Предельно допустимое напряжение сток-исток (Uds): 200 V
Предельно допустимое напряжение затвор-исток (Ugs): 30 V
Максимально допустимый постоянный ток стока (Id): 62 A
Общий заряд затвора (Qg): 70 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.026 Ohm
Тип корпуса: TO262
Аналог (замена) для AUIRFSL4227
AUIRFSL4227 Datasheet (PDF)
2.1. auirfsl4115.pdf 
Size:285K _international_rectifier
AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET® Power MOSFET Features D VDSS 150V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 10.3mΩ l 175°C Operating Temperature l Fast Switching G max. 12.1mΩ l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant ID 99A l Automotive Qualified * S D Description D Specifically designed for A
3.1. auirfs8403 auirfsl8403.pdf Size:277K _international_rectifier
AUIRFS8403 AUTOMOTIVE GRADE AUIRFSL8403 HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 2.6mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 3.3mΩ l Lead-Free, RoHS Compliant Automotive Qualified * S ID (Silicon Limited) 123A Description Specifically desi
3.2. auirfb8407 auirfs8407 auirfsl8407.pdf Size:340K _international_rectifier
AUIRFB8407 AUTOMOTIVE GRADE AUIRFS8407 AUIRFSL8407 Features HEXFET® Power MOSFET l Advanced Process Technology l New Ultra Low On-Resistance VDSS 40V D l 175°C Operating Temperature RDS(on) typ. 1.4m l Fast Switching Ω l Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m Ω l Lead-Free, RoHS Compliant G 250A ID (Silicon Limited) Automotive Qualified * S
3.3. auirfs8405 auirfsl8405.pdf Size:351K _international_rectifier
AUIRFS8405 AUTOMOTIVE GRADE AUIRFSL8405 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) typ.1.9mΩ l Fast Switching max. 2.3mΩ l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G ID (Silicon Limited) 193A l Automotive Qualified * ID (Package Limited) 120A S De
3.4. auirfs6535 auirfsl6535.pdf Size:266K _international_rectifier
AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Low On-Resistance V(BR)DSS 300V ● 175°C Operating Temperature RDS(on) typ. 148m ● Fast Switching G max. 185m ● Repetitive Avalanche Allowed up to Tjmax S ID 19A ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description D Specifically designed
3.5. auirfs8408 auirfsl8408.pdf Size:291K _international_rectifier
AUIRFS8408 AUTOMOTIVE GRADE AUIRFSL8408 Features HEXFET® Power MOSFET l Advanced Process Technology VDSS 40V l New Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) typ. 1.3m Ω l Fast Switching max. 1.6m Ω l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 317A l Lead-Free, RoHS Compliant l Automotive Qualified * ID (Package Limited) 195A Descri
3.6. auirfb8409 auirfs8409 auirfsl8409.pdf Size:398K _international_rectifier
AUIRFB8409 AUTOMOTIVE GRADE AUIRFS8409 AUIRFSL8409 Features HEXFET® Power MOSFET l Advanced Process Technology D l New Ultra Low On-Resistance VDSS 40V l 175°C Operating Temperature RDS(on) (SMD) typ. 0.97mΩ l Fast Switching max. 1.2mΩ l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 409A l Automotive Qualified * ID (Package Li
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
