All MOSFET. 2N6794JANTXV Datasheet

 

 

2N6794JANTXV Datasheet and Replacement


   Type Designator: 2N6794JANTXV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO205AF
 

 2N6794JANTXV substitution

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2N6794JANTXV Datasheet (PDF)

 8.1. Size:230K  international rectifier
 2n6794u.pdf pdf_icon

2N6794JANTXV

PD - 93986AIRFE420JANTX2N6794UREPETITIVE AVALANCHE AND dv/dt RATEDJANTXV2N6794UHEXFETTRANSISTORSREF:MIL-PRF-19500/555SURFACE MOUNT (LCC-18)500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE420 500V 3.0 1.4ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology.

 8.2. Size:128K  international rectifier
 2n6794 irff420.pdf pdf_icon

2N6794JANTXV

PD - 90429CIRFF420REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794HEXFETTRANSISTORS JANTXV2N6794THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF420 500V 3.0 1.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 8.3. Size:23K  semelab
 2n6794.pdf pdf_icon

2N6794JANTXV

2N6794SEMELABMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED

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Datasheet: 2N6792JANTXV , 2N6792SM , 2N6793 , 2N6793LCC4 , 2N6793-SM , 2N6794 , 2N6794JANT , 2N6794JANTX , IRF4905 , 2N6794SM , 2N6795 , 2N6795-SM , 2N6796 , 2N6796JANTX , 2N6796JANTXV , 2N6796SM , 2N6797 .

History: WMO09P10TS

Keywords - 2N6794JANTXV MOSFET datasheet

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