AUIRLR2703
MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRLR2703
Marking Code: AULR2703
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 15(max)
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
DPAK
AUIRLR2703
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRLR2703
Datasheet (PDF)
..1. Size:448K infineon
auirlr2703.pdf
AUTOMOTIVE GRADE AUIRLR2703 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 30V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 45m 175C Operating Temperature ID (Silicon Limited) 23A Fast Switching Fully Avalanche Rated ID (Package Limited) 20A Repetitive Avalanche Allowed up to Tjm
0.1. Size:276K international rectifier
auirlr2703tr.pdf
PD - 97620AUTOMOTIVE GRADEAUIRLR2703 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate Drive Low On-ResistanceD Dynamic dV/dT Rating V(BR)DSS 30V 175C Operating TemperatureRDS(on) max.45m Fast SwitchingGID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)20
7.1. Size:238K international rectifier
auirlr2905tr.pdf
AUIRLR2905AUTOMOTIVE GRADEAUIRLU2905 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate DriveDV(BR)DSS Low On-Resistance 55V Dynamic dV/dT RatingRDS(on) max.27m 175C Operating Temperature G Fast SwitchingID42AS Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Autom
7.2. Size:230K international rectifier
auirlr2908.pdf
PD - 97734AUTOMOTIVE GRADEAUIRLR2908FeaturesHEXFET Power MOSFETl Advanced Planar TechnologyD V(BR)DSSl Logic-Level Gate Drive 80Vl Low On-ResistanceRDS(on) typ.22.5ml 175C Operating Temperaturemax 28ml Fast SwitchingGl Fully Avalanche RatedID (Silicon Limited)39Al Repetitive Avalanche AllowedSID (Package Limited)30Aup to Tjmaxl Lead-Free,
7.3. Size:273K international rectifier
auirlr2905ztr.pdf
PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot
7.4. Size:660K infineon
auirlr2905z.pdf
AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc
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