BS170F PDF and Equivalents Search

 ..1. Size:20K  diodes
 bs170f.pdf

SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2... See More ⇒

 ..2. Size:67K  no
 bs170f.pdf

ST3-ANLNACMN O2NC HNEEHNEET B10 S7F M EETADOFT ODVRILMSE C IU3JNAY96 S SE-AUR19 FAUE ETRS *6VlVS 0o tD S *RSN= 5 D( O) D G PRMRI DTI V ATAKGEA N LM ST3 O2 ASLTMX AI BOUE AIU NS MMRTG. PRMTR SMO VLE UI AAEE YBL AU NT Da-or Vlg VS 6 V rn eoae 0 iSuc t D Cnnosrnurttab2 I 05 m otuu Da CrnaTm=5 . A i i e C 1 D PldriCrn I 3 A ue Da e s nurt D M GtS... See More ⇒

 0.1. Size:17K  zetex
 bs170fta bs170ftc.pdf

SOT23 N-CHANNEL ENHANCEMENT BS170F MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS S * RDS(ON) = 5 D G PARTMARKING DETAIL MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 0.15 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb=2... See More ⇒

 9.1. Size:77K  motorola
 bs170rev1x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS170/D TMOS FET Switching N Channel Enhancement BS170 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 Drain Source Voltage VDS 60 Vdc CASE 29 04, STYLE 30 Gate Source Voltage TO 92 (TO 226AA) Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk... See More ⇒

 9.2. Size:49K  philips
 bs170 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 60 V vertical D-MOS transistor in TO-92 Gate-source v... See More ⇒

 9.3. Size:652K  fairchild semi
 bs170.pdf

April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-state resi... See More ⇒

 9.4. Size:1298K  fairchild semi
 bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf

March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-s... See More ⇒

 9.5. Size:93K  vishay
 2n7000kl bs170kl.pdf

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) VGS(th) (V) ID (A) Pb-free ESD Protected 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 Direct Logic-Level Interface TTL/CMOS Solid-State Relays Drivers Relays,... See More ⇒

 9.6. Size:58K  vishay
 2n7000 2n7002 vq1000j-p bs170.pdf

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D... See More ⇒

 9.7. Size:58K  vishay
 2n7000 2n7002 vq1000j vq1000p bs170.pdf

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D... See More ⇒

 9.8. Size:92K  onsemi
 bs170g.pdf

BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total... See More ⇒

 9.9. Size:3674K  onsemi
 bs170 mmbf170.pdf

... See More ⇒

 9.10. Size:61K  onsemi
 bs170.pdf

BS170 Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features www.onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS Rating Symbol Value Unit RDS(on) = 5.0 W Drain-Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage - Continuous VGS 20 Vdc D - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc Total Device Di... See More ⇒

 9.11. Size:88K  onsemi
 bs170g bs170rl1g bs170rlra bs170rlrag bs170rlrmg bs170rlrp bs170rlrpg bs170zl1g.pdf

BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http //onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total... See More ⇒

 9.12. Size:15K  no
 bs170p.pdf

N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati... See More ⇒

 9.13. Size:403K  shantou-huashan
 hbs170.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, ... See More ⇒

 9.14. Size:15K  zetex
 bs170pstoa bs170pstob bs170pstz.pdf

N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25 C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20 V Power Dissipati... See More ⇒