AUIRLR3410 Specs and Replacement

Type Designator: AUIRLR3410

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: DPAK

AUIRLR3410 substitution

- MOSFET ⓘ Cross-Reference Search

 

AUIRLR3410 datasheet

 ..1. Size:555K  infineon
 auirlr3410.pdf pdf_icon

AUIRLR3410

AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175 C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D ... See More ⇒

 0.1. Size:246K  international rectifier
 auirlr3410trl.pdf pdf_icon

AUIRLR3410

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica... See More ⇒

 7.1. Size:228K  international rectifier
 auirlr3915.pdf pdf_icon

AUIRLR3410

PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R... See More ⇒

 7.2. Size:287K  international rectifier
 auirlr3705ztr.pdf pdf_icon

AUIRLR3410

PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv... See More ⇒

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Detailed specifications: AUIRLR120N, AUIRLR2703, AUIRLR2905, AUIRLR2905Z, AUIRLR2908, AUIRLR3105, AUIRLR3110Z, AUIRLR3114Z, IRLB4132, AUIRLR3636, AUIRLR3705Z, AUIRLR3714, AUIRLR3915, AUIRLS3034, AUIRLS3034-7P, AUIRLS3036, AUIRLS3036-7P

Keywords - AUIRLR3410 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.