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AUIRLR3410 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AUIRLR3410
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 34(max) nC
   trⓘ - Время нарастания: 53 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для AUIRLR3410

 

 

AUIRLR3410 Datasheet (PDF)

 ..1. Size:555K  infineon
 auirlr3410.pdf

AUIRLR3410 AUIRLR3410

AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 0.1. Size:246K  international rectifier
 auirlr3410trl.pdf

AUIRLR3410 AUIRLR3410

PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica

 7.1. Size:228K  international rectifier
 auirlr3915.pdf

AUIRLR3410 AUIRLR3410

PD - 97743AUTOMOTIVE GRADEAUIRLR3915FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.12ml 175C Operating Temperaturel Fast Switchingmax 14mGl Fully Avalanche RatedID (Silicon Limited)61Al Repetitive Avalanche AllowedSup to Tjmax ID (Package Limited)30Al Lead-Free, R

 7.2. Size:287K  international rectifier
 auirlr3705ztr.pdf

AUIRLR3410 AUIRLR3410

PD - 97611AUTOMOTIVE GRADEAUIRLR3705ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max.8.0m Fast SwitchingGID (Silicon Limited)89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant SID (Package Limited)42A Automotiv

 7.3. Size:619K  international rectifier
 auirlr3105.pdf

AUIRLR3410 AUIRLR3410

PD - 97703AAUTOMOTIVE GRADEAUIRLR3105FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55V Dynamic dV/dT Ratingl Low On-ResistanceRDS(on) typ.30ml 175C Operating TemperatureG max 37ml Fast Switchingl Fully Avalanche RatedSID25Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS CompliantDl A

 7.4. Size:636K  infineon
 auirlr3636.pdf

AUIRLR3410 AUIRLR3410

AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C

 7.5. Size:714K  infineon
 auirlr3110z auirlu3110z.pdf

AUIRLR3410 AUIRLR3410

AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea

 7.6. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf

AUIRLR3410 AUIRLR3410

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 7.7. Size:670K  infineon
 auirlr3705z.pdf

AUIRLR3410 AUIRLR3410

AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali

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History: 10N70L-TF1-T

 

 
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