IRF7704 Specs and Replacement

Type Designator: IRF7704

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 360 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TSSOP8

IRF7704 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRF7704 datasheet

 ..1. Size:193K  international rectifier
irf7704.pdf pdf_icon

IRF7704

PD- 94160 IRF7704 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -40V 46@VGS = -10V -4.6A Very Small SOIC Package 74@VGS = -4.5V -3.7A Low Profile (... See More ⇒

 ..2. Size:244K  international rectifier
irf7704pbf.pdf pdf_icon

IRF7704

PD- 96025A IRF7704PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 46@VGS = -10V -4.6A l Very Small SOIC Package 74@VGS = -4.5V -3.7A l Low Profile (... See More ⇒

 0.1. Size:245K  international rectifier
irf7704gpbf.pdf pdf_icon

IRF7704

PD-96149 IRF7704GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -40V 46@VGS = -10V -4.6A l Very Small SOIC Package 74@VGS = -4.5V -3.7A l Low Profile (... See More ⇒

 8.1. Size:141K  international rectifier
irf7701.pdf pdf_icon

IRF7704

PD - 93940 IRF7701 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET 0.011@VGS = -4.5V -10A Very Small SOIC Package -12V 0.015@VGS = -2.5V -8.5A Low Profile (... See More ⇒

Detailed specifications: IRF7420, IRF7424, IRF7425, IRF7700G, IRF7701G, IRF7702, IRF7702G, IRF7703G, 2N60, IRF7704G, IRF7705, IRF7705G, IRF7706, IRF7706G, IRF7726, IRF9310, IRF9317

Keywords - IRF7704 MOSFET specs

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