IRLML2244
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLML2244
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 4.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.9
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054
Ohm
Package:
SOT23
IRLML2244
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLML2244
Datasheet (PDF)
0.1. Size:223K international rectifier
irlml2244trpbf.pdf
PD - 97631IRLML2244TRPbFHEXFET Power MOSFETVDS-20 VVGS Max 12 VG 1RDS(on) max 54 m 3 D(@VGS = -4.5V)RDS(on) max 2S95 m Micro3TM (SOT-23)(@VGS = -2.5V)IRLML2244TRPbFApplication(s) System/Load SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 54m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompatib
0.2. Size:235K infineon
irlml2244trpbf.pdf
PD - 97631IRLML2244TRPbFHEXFET Power MOSFETVDS-20 VVGS Max 12 VG 1RDS(on) max 54 m 3 D(@VGS = -4.5V)RDS(on) max 2S95 m Micro3TM (SOT-23)(@VGS = -2.5V)IRLML2244TRPbFApplication(s) System/Load SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 54m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompatib
0.3. Size:176K tysemi
irlml2244trpbf.pdf
Product specificationIRLML2244TRPbFHEXFET Power MOSFETVDS-20 VVGS Max 12 VG 1RDS(on) max 54 m 3 D(@VGS = -4.5V)RDS(on) max 2S95 m Micro3TM (SOT-23)(@VGS = -2.5V)IRLML2244TRPbFApplication(s) System/Load SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 54m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilit
0.4. Size:914K cn vbsemi
irlml2244trpbf.pdf
IRLML2244TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
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