All MOSFET. 2N6794SM Datasheet

 

2N6794SM MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6794SM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 1.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.7 nC

Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm

Package: TO220SM

2N6794SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6794SM Datasheet (PDF)

4.1. 2n6794u.pdf Size:230K _update-mosfet

2N6794SM
2N6794SM

PD - 93986A IRFE420 JANTX2N6794U REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6794U HEXFET®TRANSISTORS REF:MIL-PRF-19500/555 SURFACE MOUNT (LCC-18) 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE420 500V 3.0Ω 1.4A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features: mount technology.

4.2. 2n6794 irff420.pdf Size:128K _international_rectifier

2N6794SM
2N6794SM

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET?TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0? 1.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this la

 4.3. 2n6794.pdf Size:23K _semelab

2N6794SM
2N6794SM

2N6794 SEME LAB MECHANICAL DATA Dimensions in mm (inches) NCHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED

Datasheet: 2N6792SM , 2N6793 , 2N6793LCC4 , 2N6793-SM , 2N6794 , 2N6794JANT , 2N6794JANTX , 2N6794JANTXV , 2N4416 , 2N6795 , 2N6795-SM , 2N6796 , 2N6796JANTX , 2N6796JANTXV , 2N6796SM , 2N6797 , 2N6797LCC4 .

 

 
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