2N6794SM
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6794SM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16.7
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5
Ohm
Package:
TO220SM
2N6794SM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6794SM
Datasheet (PDF)
8.1. Size:230K international rectifier
2n6794u.pdf 
PD - 93986AIRFE420JANTX2N6794UREPETITIVE AVALANCHE AND dv/dt RATEDJANTXV2N6794UHEXFETTRANSISTORSREF:MIL-PRF-19500/555SURFACE MOUNT (LCC-18)500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE420 500V 3.0 1.4ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology.
8.2. Size:128K international rectifier
2n6794 irff420.pdf
PD - 90429CIRFF420REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794HEXFETTRANSISTORS JANTXV2N6794THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF420 500V 3.0 1.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing
8.3. Size:23K semelab
2n6794.pdf
2N6794SEMELABMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED
Datasheet: 2N6792SM
, 2N6793
, 2N6793LCC4
, 2N6793-SM
, 2N6794
, 2N6794JANT
, 2N6794JANTX
, 2N6794JANTXV
, 12N60
, 2N6795
, 2N6795-SM
, 2N6796
, 2N6796JANTX
, 2N6796JANTXV
, 2N6796SM
, 2N6797
, 2N6797LCC4
.
