All MOSFET. IRFI4024H-117P Datasheet

 

IRFI4024H-117P Datasheet and Replacement


   Type Designator: IRFI4024H-117P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.9 nC
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220FP-5PIN
 

 IRFI4024H-117P substitution

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IRFI4024H-117P Datasheet (PDF)

 ..1. Size:254K  1
irfi4024h-117p.pdf pdf_icon

IRFI4024H-117P

PD - 97254DIGITAL AUDIO MOSFETIRFI4024H-117PKey Parameters gFeaturesVDS55 V Integrated half-bridge packageRDS(ON) typ. @ 10V m:48 Reduces the part count by halfQg typ.8.9 nC Facilitates better PCB layoutQsw typ.4.3 nC Key parameters optimized for Class-DRG(int) typ. 2.3 audio amplifier applicationsTJ max150 C Low RDS(ON) for improved

 7.1. Size:200K  1
irfi4020h-117p.pdf pdf_icon

IRFI4024H-117P

PD - 97252DIGITAL AUDIO MOSFETIRFI4020H-117PFeatures Key Parameters Integrated half-bridge package VDS200 VRDS(ON) typ. @ 10V m Reduces the part count by half 80Qg typ. Facilitates better PCB layout 19 nCQsw typ. Key parameters optimized for Class-D 6.8 nCaudio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max150 C

 7.2. Size:200K  international rectifier
irfi4020h-117p.pdf pdf_icon

IRFI4024H-117P

PD - 97252DIGITAL AUDIO MOSFETIRFI4020H-117PFeatures Key Parameters Integrated half-bridge package VDS200 VRDS(ON) typ. @ 10V m Reduces the part count by half 80Qg typ. Facilitates better PCB layout 19 nCQsw typ. Key parameters optimized for Class-D 6.8 nCaudio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max150 C

 8.1. Size:290K  1
irfi4019h-117p.pdf pdf_icon

IRFI4024H-117P

PD - 97074AIRFI4019H-117PDIGITAL AUDIO MOSFETFeatures Key Parameters h Integrated Half-Bridge PackageVDS 150 V Reduces the Part Count by Halfm:RDS(ON) typ. @ 10V 80 Facilitates Better PCB LayoutQg typ. 13 nC Key Parameters Optimized for Class-DQsw typ. 4.1 nCAudio Amplifier ApplicationsRG(int) typ. 2.5 Low RDS(ON) for Improved EfficiencyTJ max 150

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - IRFI4024H-117P MOSFET datasheet

 IRFI4024H-117P cross reference
 IRFI4024H-117P equivalent finder
 IRFI4024H-117P lookup
 IRFI4024H-117P substitution
 IRFI4024H-117P replacement

 

 
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