All MOSFET. IRF7351 Datasheet

 

IRF7351 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7351
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 5.9 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0178 Ohm
   Package: SO8

 IRF7351 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7351 Datasheet (PDF)

 ..1. Size:276K  international rectifier
irf7351pbf.pdf

IRF7351 IRF7351

PD - 97436IRF7351PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous Rectifier MOSFET for17.8m@VGS = 10V60V 24nCIsolated DC-DC Convertersl Low Power Motor Drive Systems1 8S1 D1Benefits2 7G1 D1l Ultra-Low Gate Impedance3 6S2 D2l Fully Characterized Avalanche Voltage45G2 D2and Currentl 20V VGS Max. Gate RatingSO-8Top

 ..2. Size:282K  infineon
irf7351pbf.pdf

IRF7351 IRF7351

PD - 97436IRF7351PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg (typ.)l Synchronous Rectifier MOSFET for17.8m@VGS = 10V60V 24nCIsolated DC-DC Convertersl Low Power Motor Drive Systems1 8S1 D1Benefits2 7G1 D1l Ultra-Low Gate Impedance3 6S2 D2l Fully Characterized Avalanche Voltage45G2 D2and Currentl 20V VGS Max. Gate RatingSO-8Top

 8.1. Size:134K  international rectifier
irf7353d1pbf.pdf

IRF7351 IRF7351

PD - 95251AIRF7353D1PbFFETKY MOSFET / Schottky Diodel Co-packaged HEXFET Power MOSFETand Schottky Diode1 8A KVDSS = 30Vl Ideal For Buck Regulator Applications2 7A Kl N-Channel HEXFET3 6 RDS(on) = 0.029l Low VF Schottky RectifierS Dl Generation 5 Technology45G Dl SO-8 Footprint Schottky Vf = 0.39Vl Lead-FreeTop ViewDescriptionThe FETKY family

 8.2. Size:112K  international rectifier
irf7353d2.pdf

IRF7351 IRF7351

PD- 93809IRF7353D2 FETKY MOSFET / Schottky Diode Co-Pack HEXFET Power MOSFET and1 8A KSchottky DiodeVDSS = 30V2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET power MOSFET3 6 RDS(on) = 0.029S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky VF = 0.52V SO-8 FootprintTop ViewDescriptionThe FETKY

 8.3. Size:170K  international rectifier
irf7353d1.pdf

IRF7351 IRF7351

PD- 91802AIRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET1 8A Kand Schottky DiodeVDSS = 30V2 7 Ideal For Buck Regulator ApplicationsA K N-Channel HEXFET3 6 RDS(on) = 0.029S D Low VF Schottky Rectifier45G D Generation 5 TechnologySchottky Vf = 0.39V SO-8 FootprintTop ViewDescriptionThe FETKY family

 8.4. Size:122K  international rectifier
irf7353d2pbf.pdf

IRF7351 IRF7351

PD- 95215AIRF7353D2PbFFETKY MOSFET / Schottky Diodel Co-Pack HEXFET Power MOSFET andSchottky Diode1 8A Kl Ideal For Buck Regulator ApplicationsVDSS = 30V2 7l N-Channel HEXFET power MOSFETA Kl Low VF Schottky Rectifier3 6 RDS(on) = 0.029S Dl Generation 5 Technology45G Dl SO-8 FootprintSchottky VF = 0.52Vl Lead-FreeTop ViewDescriptionThe FETK

 8.5. Size:238K  international rectifier
irf7350.pdf

IRF7351 IRF7351

PD - 94226BIRF7350HEXFET Power MOSFET Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch1 8S1 D1 Dual N and P Channel MOSFET2 7 Surface MountG1 D1VDSS 100V -100V Available in Tape and Reel3 6S2 D24 5G2 D2P-CHANNEL MOSFETRDS(on) 0.21 0.48Top ViewDescriptionThese dual N and P channel HEXFET power MOSFETs from InternationalRectifier utilize

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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