IRF7324 Datasheet. Specs and Replacement
Type Designator: IRF7324 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SO8
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IRF7324 substitution
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IRF7324 datasheet
irf7324pbf.pdf
PD - 95460 IRF7324PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (... See More ⇒
irf7324.pdf
PD -93799A IRF7324 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (... See More ⇒
irf7324pbf-1.pdf
IRF7324TRPbF-1 HEXFET Power MOSFET VDS -20 V 1 8 RDS(on) max S1 D1 0.018 2 7 (@V = -4.5V) GS G1 D1 Qg (typical) 42 nC 3 6 S2 D2 ID 4 5 -9.0 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En... See More ⇒
irf7324d1pbf.pdf
PD-95309A IRF7324D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 l Ideal for Mobile Phone Applications A K l Generation V Technology 3 6 S D RDS(on) = 0.27 l SO-8 Footprint 4 5 G D l Lead-Free Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer ... See More ⇒
Detailed specifications: IRF8852, IRF7103I, IRF7304Q, IRF7756G, IRF7314Q, IRF7329, IRF7316Q, IRF7306, IRFP250, IRF7750G, IRF9358, IRF5810, IRF7750, IRF9362, IRF7755G, IRF7306Q, IRF7342
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
