IRF7304 Datasheet. Specs and Replacement
Type Designator: IRF7304 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SO8
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IRF7304 substitution
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IRF7304 datasheet
irf7304pbf.pdf
PD - 95038 IRF7304PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P-Channel Mosfet VDSS = -20V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.090 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize adva... See More ⇒
irf7304.pdf
PD - 9.1240C IRF7304 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance 1 8 S1 D1 Dual P-Channel Mosfet VDSS = -20V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.090 Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec... See More ⇒
irf7304q.pdf
PD - 96104 IRF7304QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual P Channel MOSFET VDSS = -20V 2 7 G1 D1 l Surface Mount l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified RDS(on) = 0.090 l Lead-Free Top View Description Specifically designed for Automotive appl... See More ⇒
Detailed specifications: IRF7750G, IRF9358, IRF5810, IRF7750, IRF9362, IRF7755G, IRF7306Q, IRF7342, 20N50, IRF5850, IRF7104, IRF7342Q, IRFHS9351, IRF9395M, IRF7314, IRF7504, IRF7751G
Keywords - IRF7304 MOSFET specs
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History: SI5475BDC | IRF7756G | MTB160N25J3
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