All MOSFET. IRF9952Q Datasheet

 

IRF9952Q Datasheet and Replacement


   Type Designator: IRF9952Q
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO8
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IRF9952Q Datasheet (PDF)

 ..1. Size:280K  international rectifier
irf9952qpbf.pdf pdf_icon

IRF9952Q

PD - 96115IRF9952QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETl Ultra Low On-Resistance 1 8N-Ch P-ChS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6l Available in Tape & ReelS2 D2l 150C Operating Temperature4 5G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.10 0.25l Lead-FreeTop V

 0.1. Size:324K  1
auirf9952q.pdf pdf_icon

IRF9952Q

AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH1 8S1 D1 Low On-Resistance 2 7G1 D1 Logic Level Gate Drive VDSS 30V -30V3 6S2 D2 Dual N and P Channel MOSFET 45G2 D2RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 3.5A -2.3A

 7.1. Size:224K  international rectifier
irf9952pbf.pdf pdf_icon

IRF9952Q

PD - 95135IRF9952PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7l Dual N and P Channel MOSFETG1 D1l Surface Mount VDSS 30V -30V3 6S2 D2l Very Low Gate Charge and4 5G2 D2Switching LossesP-CHANNEL MOSFETRDS(on) 0.10 0.25l Fully Avalanche RatedTop Viewl Lead-FreeRecommended upgrade:

 7.2. Size:134K  international rectifier
irf9952.pdf pdf_icon

IRF9952Q

PD - 9.1561AIRF9952PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE T1 8 N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MOSFETG1 D1 Surface Mount VDSS 30V -30V3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesP -CH AN N EL M OSFETRDS(on) 0.10 0.25 Fully Avalanche RatedT op V iewRecommended upgrade:

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF7749L2TR1PBF | SL2343 | HSM4606 | IRF3708LPBF | LSD65R570GT | 7N90AF | FTK730F

Keywords - IRF9952Q MOSFET datasheet

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