IRF9952Q - параметры транзистора MOSFET, его аналоги, datasheet

IRF9952Q Datasheet (PDF)

..1. Size:280K international rectifier
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PD - 96115IRF9952QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETl Ultra Low On-Resistance 1 8N-Ch P-ChS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6l Available in Tape & ReelS2 D2l 150C Operating Temperature4 5G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.10 0.25l Lead-FreeTop V

0.1. Size:324K 1
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AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH1 8S1 D1 Low On-Resistance 2 7G1 D1 Logic Level Gate Drive VDSS 30V -30V3 6S2 D2 Dual N and P Channel MOSFET 45G2 D2RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 3.5A -2.3A

7.1. Size:224K international rectifier
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PD - 95135IRF9952PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7l Dual N and P Channel MOSFETG1 D1l Surface Mount VDSS 30V -30V3 6S2 D2l Very Low Gate Charge and4 5G2 D2Switching LossesP-CHANNEL MOSFETRDS(on) 0.10 0.25l Fully Avalanche RatedTop Viewl Lead-FreeRecommended upgrade:

7.2. Size:134K international rectifier
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PD - 9.1561AIRF9952PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE T1 8 N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MOSFETG1 D1 Surface Mount VDSS 30V -30V3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesP -CH AN N EL M OSFETRDS(on) 0.10 0.25 Fully Avalanche RatedT op V iewRecommended upgrade:

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .