AUIRF7341Q MOSFET Datasheet: N-Ch, 55V, 5.1A. Full specification with pinout and replacement list

AUIRF7341Q Specs and Replacement

Type Designator: AUIRF7341Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.7 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO8

AUIRF7341Q substitution

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AUIRF7341Q datasheet

..1. Size:403K 1
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AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175 C Operating Temperature Lead-Free, RoHS Co... See More ⇒

..2. Size:421K infineon
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6.1. Size:225K 1
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PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l Advanced Planar Technology N-Ch P-Ch N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET V(BR)DSS 55V -55V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 RDS(on) typ. 0.043 0.095 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualif... See More ⇒

6.2. Size:172K 1
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PD - 97640 AUTOMOTIVE GRADE AUIRF7342Q Advanced Planar Technology Low On-Resistance HEXFET Power MOSFET Dual P-Channel MOSFET Dynamic dV/dT Rating 1 8 S1 D1 V(BR)DSS -55V 150 C Operating Temperature 2 7 G1 D1 Fast Switching 3 6 S2 D2 RDS(on) max. 0.105 Fully Avalanche Rated 4 5 G2 D2 Lead-Free, RoHS Compliant ID -3.4A Top View Autom... See More ⇒