All MOSFET. 2SK1359 Datasheet

 

2SK1359 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1359
   Marking Code: K1359
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: SC65 TO3P

 2SK1359 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1359 Datasheet (PDF)

 ..1. Size:408K  toshiba
 2sk1359.pdf

2SK1359 2SK1359

2SK1359 .5TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1

 8.1. Size:569K  toshiba
 2sk1358.pdf

2SK1359 2SK1359

TOSHIBADiscrete Semiconductors 2SK1358Industrial Applications Unit in mmField Effect TransistorSilicon N Channel MOS Type ( -MOS II.5)High Speed, High Current DC-DC Converter,Relay Drive and Motor Drive ApplicationsFeatures Low Drain-Source ON Resistance- RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance- Yfs = 4.0S (Typ.) Low Leakage Current-

 8.2. Size:279K  toshiba
 2sk1357.pdf

2SK1359 2SK1359

 8.3. Size:189K  hitachi
 2sk133 2sk134 2sk135.pdf

2SK1359 2SK1359

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:39K  no
 2sk1356.pdf

2SK1359

 8.5. Size:54K  no
 2sk1352.pdf

2SK1359 2SK1359

 8.6. Size:87K  no
 2sk1351.pdf

2SK1359 2SK1359

www.DataSheet4U.comwww.DataSheet4U.com

 8.7. Size:54K  no
 2sk1350.pdf

2SK1359 2SK1359

 8.8. Size:227K  inchange semiconductor
 2sk1356.pdf

2SK1359 2SK1359

isc N-Channel MOSFET Transistor 2SK1356DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.9. Size:175K  inchange semiconductor
 2sk1352.pdf

2SK1359 2SK1359

isc N-Channel MOSFET Transistor 2SK1352DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.10. Size:197K  inchange semiconductor
 2sk1351.pdf

2SK1359 2SK1359

isc N-Channel MOSFET Transistor 2SK1351DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

 8.11. Size:214K  inchange semiconductor
 2sk1350.pdf

2SK1359 2SK1359

isc N-Channel MOSFET Transistor 2SK1350DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200

 8.12. Size:238K  inchange semiconductor
 2sk1358.pdf

2SK1359 2SK1359

isc N-Channel MOSFET Transistor 2SK1358DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high current DC-DC converter,Relay Drive adn Moto Drives Applications.A

 8.13. Size:203K  inchange semiconductor
 2sk1357.pdf

2SK1359 2SK1359

isc N-Channel MOSFET Transistor 2SK1357DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK738

 

 
Back to Top