2SK1359 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1359
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.8 Ohm
Тип корпуса: SC65 TO3P
2SK1359 Datasheet (PDF)
2sk1359.pdf
2SK1359 .5TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1
2sk1358.pdf
TOSHIBADiscrete Semiconductors 2SK1358Industrial Applications Unit in mmField Effect TransistorSilicon N Channel MOS Type ( -MOS II.5)High Speed, High Current DC-DC Converter,Relay Drive and Motor Drive ApplicationsFeatures Low Drain-Source ON Resistance- RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance- Yfs = 4.0S (Typ.) Low Leakage Current-
2sk133 2sk134 2sk135.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sk1356.pdf
isc N-Channel MOSFET Transistor 2SK1356DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1352.pdf
isc N-Channel MOSFET Transistor 2SK1352DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1351.pdf
isc N-Channel MOSFET Transistor 2SK1351DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1350.pdf
isc N-Channel MOSFET Transistor 2SK1350DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200
2sk1358.pdf
isc N-Channel MOSFET Transistor 2SK1358DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high current DC-DC converter,Relay Drive adn Moto Drives Applications.A
2sk1357.pdf
isc N-Channel MOSFET Transistor 2SK1357DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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