2SK3767 Specs and Replacement

Type Designator: 2SK3767

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO220SIS

2SK3767 substitution

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2SK3767 datasheet

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 2sk3767.pdf pdf_icon

2SK3767

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3767 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.3 (typ.) High forward transfer admittance Yfs = 1.6S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings... See More ⇒

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 2sk3767.pdf pdf_icon

2SK3767

isc N-Channel MOSFET Transistor 2SK3767 FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

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 2sk3761.pdf pdf_icon

2SK3767

2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3761 unit Switching Regulator Applications 4.7max 4.7 max 10.5 max 10.5max 3.84 0.2 1.3 3.84 0.2 1.3 Low drain-source ON resistance R = 0.9 (typ.) DS (ON) High forward transfer admittance Y = 5.0S (typ.) fs Low leakage current I = 100 A (V = 600 V) ... See More ⇒

 8.2. Size:274K  toshiba
 2sk3766.pdf pdf_icon

2SK3767

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3766 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.9 (typ.) High forward transfer admittance Yfs = 0.65 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 3.5 4.5 V (VDS = 10 V, ID = 1 mA) Absolut... See More ⇒

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Detailed specifications: 2SK3633, 2SK3658, 2SK3670, 2SK3700, 2SK3742, 2SK3754, 2SK3757, 2SK3766, AON7403, 2SK3798, 2SK3799, 2SK3842, 2SK3843, 2SK3845, 2SK3878, 2SK3880, 2SK3940

Keywords - 2SK3767 MOSFET specs

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