All MOSFET. 2SK4014 Datasheet

 

2SK4014 Datasheet and Replacement


   Type Designator: 2SK4014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220SIS
 

 2SK4014 substitution

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2SK4014 Datasheet (PDF)

 ..1. Size:237K  toshiba
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2SK4014

2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON-resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V

 ..2. Size:240K  inchange semiconductor
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2SK4014

isc N-Channel MOSFET Transistor 2SK4014I2SK4014FEATURESLow drain-source on-resistance:RDS(on) 2.0.Enhancement mode:Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC Converter, Relay Drive and Motor DriveApplicationsABSOLUTE MAXIMUM RATINGS(T

 8.1. Size:214K  toshiba
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2SK4014

2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4015 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

 8.2. Size:225K  toshiba
2sk4016.pdf pdf_icon

2SK4014

2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4016 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

Datasheet: 2SK3842 , 2SK3843 , 2SK3845 , 2SK3878 , 2SK3880 , 2SK3940 , 2SK4003 , 2SK4013 , IRFZ44N , 2SK4017 , 2SK4023 , 2SK4026 , 2SK4033 , 2SK4034 , 2SK4115 , 2SK4207 , HN1J02FU .

History: STH60N10FI | IRHMS597Z60 | CEP50N06 | JCS640FH | HAT1048RJ | BRB50N06 | HUF75339G3

Keywords - 2SK4014 MOSFET datasheet

 2SK4014 cross reference
 2SK4014 equivalent finder
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