2SK4115 Specs and Replacement

Type Designator: 2SK4115

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SC65 TO3P

2SK4115 substitution

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2SK4115 datasheet

 ..1. Size:343K  toshiba
2sk4115.pdf pdf_icon

2SK4115

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( - MOS ) 2SK4115 Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V ... See More ⇒

 ..2. Size:282K  inchange semiconductor
2sk4115.pdf pdf_icon

2SK4115

iscN-Channel MOSFET Transistor 2SK4115 FEATURES Low drain-source on-resistance RDS(ON) = 2.0 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒

 8.1. Size:240K  toshiba
2sk4111.pdf pdf_icon

2SK4115

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4111 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 8.5S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒

 8.2. Size:202K  toshiba
2sk4110.pdf pdf_icon

2SK4115

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4110 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma... See More ⇒

Detailed specifications: 2SK4003, 2SK4013, 2SK4014, 2SK4017, 2SK4023, 2SK4026, 2SK4033, 2SK4034, IRF540, 2SK4207, HN1J02FU, HN1K02FU, HN1K03FU, HN1K04FU, HN1K05FU, HN1K06FU, HN1L02FU

Keywords - 2SK4115 MOSFET specs

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