2SK4115 - описание и поиск аналогов

 ..1. Size:343K  toshiba
 2sk4115.pdf 

2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( - MOS ) 2SK4115 Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V

 ..2. Size:282K  inchange semiconductor
 2sk4115.pdf 

iscN-Channel MOSFET Transistor 2SK4115 FEATURES Low drain-source on-resistance RDS(ON) = 2.0 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:240K  toshiba
 2sk4111.pdf 

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4111 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 8.5S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 8.2. Size:202K  toshiba
 2sk4110.pdf 

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4110 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

 8.3. Size:210K  toshiba
 2sk4113.pdf 

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.0 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 8.4. Size:210K  toshiba
 2sk4112.pdf 

2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4112 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 5.5S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 8.5. Size:162K  toshiba
 2sk4114.pdf 

2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK4114 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.2 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement model Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso

 8.6. Size:52K  sanyo
 2sk4118ls.pdf 

Ordering number ENA0829 2SK4118LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4118LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 8.7. Size:52K  sanyo
 2sk4119ls.pdf 

Ordering number ENA0830 2SK4119LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4119LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 8.8. Size:270K  sanyo
 2sk4116ls.pdf 

Ordering number ENA0790A 2SK4116LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4116LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 8.9. Size:270K  sanyo
 2sk4117ls.pdf 

Ordering number ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications

 8.10. Size:280K  inchange semiconductor
 2sk4118ls.pdf 

isc N-Channel MOSFET Transistor 2SK4118LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.11. Size:279K  inchange semiconductor
 2sk4119ls.pdf 

isc N-Channel MOSFET Transistor 2SK4119LS FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.12. Size:280K  inchange semiconductor
 2sk4116ls.pdf 

isc N-Channel MOSFET Transistor 2SK4116LS FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.54 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.13. Size:278K  inchange semiconductor
 2sk4117ls.pdf 

isc N-Channel MOSFET Transistor 2SK4117LS FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole