All MOSFET. SSM3J01F Datasheet

 

SSM3J01F MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM3J01F
   Marking Code: DE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 94 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT346 SC59 SMINI

 SSM3J01F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM3J01F Datasheet (PDF)

 ..1. Size:312K  toshiba
 ssm3j01f.pdf

SSM3J01F SSM3J01F

SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.4 (max) (VGS = -4 V) : Ron = 0.6 (max) (VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS -30 VGate-so

 7.1. Size:207K  toshiba
 ssm3j01t.pdf

SSM3J01F SSM3J01F

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch Unit: mmHigh Speed Switching Applications Small Package Low on Resistance: Ron = 0.4 (max) (@VGS = -4 V) : Ron = 0.6 (max) (@VGS = -2.5 V) Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source

 8.1. Size:319K  toshiba
 ssm3j02f.pdf

SSM3J01F SSM3J01F

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source

 8.2. Size:184K  toshiba
 ssm3j02t.pdf

SSM3J01F SSM3J01F

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch Unit: mmHigh Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 (max) (@VGS = -4 V) : Ron = 0.7 (max) (@VGS = -2.5 V) Low-voltage operation possible Absolute Maximum Ratings

 8.3. Size:290K  toshiba
 ssm3j05fu.pdf

SSM3J01F SSM3J01F

SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 3.3 (max) (@VGS = -4 V) : Ron = 4.0 (max) (@VGS = -2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-sour

 8.4. Size:165K  toshiba
 ssm3j09fu.pdf

SSM3J01F SSM3J01F

SSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Management Switch Unit: mmHigh Speed Switching Applications Small package Low on resistance: Ron = 2.7 (max) (@VGS = -10 V) : Ron = 4.2 (max) (@VGS = -4 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source voltage

Datasheet: HN1K02FU , HN1K03FU , HN1K04FU , HN1K05FU , HN1K06FU , HN1L02FU , HN1L03FU , HN4K03JU , IRFB4227 , SSM3J01T , SSM3J02F , SSM3J02T , SSM3J05FU , SSM3J09FU , SSM3J108TU , SSM3J109TU , SSM3J110TU .

History: SSM3J108TU | SDF034JAB-D | PJT138K

 

 
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