SSM3J135TU Specs and Replacement

Type Designator: SSM3J135TU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm

Package: UFM

SSM3J135TU substitution

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SSM3J135TU datasheet

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SSM3J135TU

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SSM3J135TU

SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J134TU Power Management Switch Applications 1.5 V drive Unit mm Low ON-resistance RDS(ON) = 240 m (max) (@VGS = -1.5 V) RDS(ON) = 168 m (max) (@VGS = -1.8 V) RDS(ON) = 123 m (max) (@VGS = -2.5 V) RDS(ON) = 93 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25... See More ⇒

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SSM3J135TU

SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J132TU Power Management Switch Applications 1.2-V drive Unit mm Low ON-resistance RDS(ON) = 94 m (max) (@VGS = -1.2 V) RDS(ON) = 39 m (max) (@VGS = -1.5 V) RDS(ON) = 29 m (max) (@VGS = -1.8 V) RDS(ON) = 21 m (max) (@VGS = -2.5 V) RDS(ON) = 17 m (max) (@VGS = -4.5 ... See More ⇒

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SSM3J135TU

SSM3J130TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J130TU Power Management Switch Applications 1.5 V drive Unit mm Low ON-resistance RDS(ON) = 63.2 m (max) (@VGS = -1.5 V) RDS(ON) = 41.1 m (max) (@VGS = -1.8 V) 2.1 0.1 RDS(ON) = 31.0 m (max) (@VGS = -2.5 V) 1.7 0.1 RDS(ON) = 25.8 m (max) (@VGS = -4.5 V) 1 Absolu... See More ⇒

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Detailed specifications: SSM3J117TU, SSM3J118TU, SSM3J120TU, SSM3J129TU, SSM3J130TU, SSM3J132TU, SSM3J133TU, SSM3J134TU, 4435, SSM3J13T, SSM3J14T, SSM3J15CT, SSM3J15FS, SSM3J15FU, SSM3J15FV, SSM3J15F, SSM3J16CT

Keywords - SSM3J135TU MOSFET specs

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