All MOSFET. SSM3J16CT Datasheet

 

SSM3J16CT Datasheet and Replacement


   Type Designator: SSM3J16CT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT883 CST3
 

 SSM3J16CT substitution

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SSM3J16CT Datasheet (PDF)

 ..1. Size:203K  toshiba
 ssm3j16ct.pdf pdf_icon

SSM3J16CT

SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm0.60.05 Small package 0.50.03 Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25

 7.1. Size:180K  toshiba
 ssm3j16fv.pdf pdf_icon

SSM3J16CT

SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25C) 0.80.05

 7.2. Size:222K  toshiba
 ssm3j16fu.pdf pdf_icon

SSM3J16CT

SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

 7.3. Size:185K  toshiba
 ssm3j16fs.pdf pdf_icon

SSM3J16CT

SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

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Datasheet: SSM3J135TU , SSM3J13T , SSM3J14T , SSM3J15CT , SSM3J15FS , SSM3J15FU , SSM3J15FV , SSM3J15F , IRF530 , SSM3J16FS , SSM3J16FU , SSM3J16FV , SSM3J304T , SSM3J305T , SSM3J306T , SSM3J307T , SSM3J312T .

History: IPB04N03LAT

Keywords - SSM3J16CT MOSFET datasheet

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