SSM3J325F Specs and Replacement

Type Designator: SSM3J325F

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT346 SC59 SMINI

SSM3J325F substitution

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SSM3J325F datasheet

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SSM3J325F

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J325F Power Management Switch Applications Unit mm +0.5 1.5-V drive 2.5-0.3 +0.25 Low ON-resistance R = 311 m (max) (@V = -1.5 V) DS(ON) GS 1.5-0.15 R = 231 m (max) (@V = -1.8 V) DS(ON) GS R = 179 m (max) (@V = -2.5 V) DS(ON) GS 1 R = 150 m (max) (@V = -4.5 V) ... See More ⇒

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SSM3J325F

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SSM3J325F

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SSM3J325F

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Detailed specifications: SSM3J305T, SSM3J306T, SSM3J307T, SSM3J312T, SSM3J313T, SSM3J314T, SSM3J317T, SSM3J321T, IRFP250, SSM3J326T, SSM3J327F, SSM3J327R, SSM3J328R, SSM3J332R, SSM3J334R, SSM3J35CT, SSM3J35FS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.